Samsung LPDDR3 常用型號
作者: 來源: 發(fā)布時間:2020-06-02 瀏覽:14
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關(guān)鍵字: K4E6E304EB K4EBE304EB-EGCF |
Samsung LPDDR3 mobile DRAM is high-speed, power-saving memory built specifically for smartphones and tablets. LPDDR3 provides higher bandwidth and greater density for superb graphic resolution, smooth streaming multimedia and instant-on, instantplay performance. Multitasking, longer standby, larger screen sizes and thinner profiles are also possible using LPDDR3 mobile DRAM. When choosing Samsung LPDDR3 memory, manufacturers gain the following exceptional design advantages while end users benefit from enhanced performance.SamsunSamsung LPDDR3目前還在量產(chǎn)的主要是32bit 178ball 和64 bit 253ball ballSamsung LPDDR3 常用型號2020-04料號 | 容量 | 架構(gòu) | 速率 | 工作電壓 | 工作溫度 | 封裝 | K3QF3F30BM-AGCF | 16 Gb | x64 | 1866 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 253FBGA | K3QF3F30BM-AGCG | 16 Gb | x32 | 2133 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 178FBGA | K3QF4F40CM-AGCF | 32 Gb | x64 | 1866 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 253FBGA | K3QFAFA0CM-AGCF | 64 Gb | x64 | 1866 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 253FBGA | K4E6E304EB-EGCG | 16 Gb | x32 | 2133 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 178FBGA | K4E6E304EC-EGCG | 16 Gb | x32 | 2133 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 178FBGA | K4E6E304ED-EGCG | 16 Gb | x32 | 2133 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 178FBGA | K4E8E324EB-EGCG | 8 Gb | x32 | 2133 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 178FBGA | K4E8E324ED-EGCG | 8 Gb | x32 | 2133 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 178FBGA | K4EBE304EB-EGCG | 32 Gb | x32 | 2133 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 178FBGA | K4EBE304EC-EGCG | 32 Gb | x32 | 2133 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 178FBGA | K4EBE304ED-EGCG | 32 Gb | x32 | 2133 Mbps | 1.8 / 1.2 / 1.2 V | -25 ~ 85 °C | 178FBGA | 編輯:admin 最后修改時間:2020-06-02
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